Infineon FP75R12KT4BOSA1 IGBT Module 1200 V EconoPIM
- RS 제품 번호:
- 244-5854
- 제조사 부품 번호:
- FP75R12KT4BOSA1
- 제조업체:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
₩183,240.00
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- 20 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩183,240.00 |
| 2 - 2 | ₩179,580.00 |
| 3 - 3 | ₩175,980.00 |
| 4 - 4 | ₩172,460.00 |
| 5 + | ₩169,020.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-5854
- 제조사 부품 번호:
- FP75R12KT4BOSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 385W | |
| Package Type | EconoPIM | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 122mm | |
| Height | 17mm | |
| Standards/Approvals | RoHS | |
| Width | 62.5mm | |
| Series | FP75R12KT4B | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 385W | ||
Package Type EconoPIM | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 122mm | ||
Height 17mm | ||
Standards/Approvals RoHS | ||
Width 62.5mm | ||
Series FP75R12KT4B | ||
Automotive Standard No | ||
Infineon FP75R12KT4B Series IGBT Module, 385W Maximum Power Dissipation, 1200V Maximum Collector Emitter Voltage - FP75R12KT4BOSA1
This IGBT module is a power semiconductor assembly designed to switch and control high-voltage DC in industrial converters and motor drives. It is supplied in a Compact EconoPIM package intended for integration into power electronic systems and operates across a broad thermal range suitable for demanding environments.
Features and Benefits:
• 1200 V blocking capability for high-voltage switching applications
• 385 W dissipation rating to handle substantial power loss
• 2.15 V VCE(sat) reduces conduction losses during on-state
• 20 V gate-emitter tolerance for robust gate-drive margins
• Seven-transistor configuration enables multi-switch topologies
• RoHS-compliant construction for regulated material requirements
• 385 W dissipation rating to handle substantial power loss
• 2.15 V VCE(sat) reduces conduction losses during on-state
• 20 V gate-emitter tolerance for robust gate-drive margins
• Seven-transistor configuration enables multi-switch topologies
• RoHS-compliant construction for regulated material requirements
Applications
• Suitable for high-voltage industrial motor drives
• Used with three-phase inverter assemblies in factories
• Ideal for high-power DC-DC conversion modules
• Can be used for medium-voltage traction power electronics
• Used for power supplies requiring multiple switching elements
• Used with three-phase inverter assemblies in factories
• Ideal for high-power DC-DC conversion modules
• Can be used for medium-voltage traction power electronics
• Used for power supplies requiring multiple switching elements
What temperature extremes can the device withstand during operation?
It is rated to function from −40 °C up to a maximum operating temperature of 150 °C.
How many switching elements are integrated within the package?
The module contains seven transistors for multi-leg or parallel switching arrangements.
What are the physical envelope measurements for mounting considerations?
The package measures 122 mm in length, 62.5 mm in width and 17 mm in height.
Does the module meet material restriction requirements for manufacturing?
It conforms to RoHS standards restricting certain hazardous substances.
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