제조사부품번호

Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

RS 제품 번호:: 244-5379
제조사 부품 번호:: FP100R12KT4BOSA1
제조업체:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

대량 구매 할인 기용 가능

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Subtotal (1 tray of 10 units)*

₩1,842,700.00

일시적 품절

2027년 4월 07일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tray*
10 - 10	₩184,270.00	₩1,842,700.00
20 - 20	₩180,586.00	₩1,805,860.00
30 +	₩176,974.00	₩1,769,740.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5379
제조사 부품 번호:: FP100R12KT4BOSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	515W
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	FP100R12KT4
	Length	122mm
	Standards/Approvals	RoHS
	Width	62mm
	Height	17mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 515W
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series FP100R12KT4
	Length 122mm
	Standards/Approvals RoHS
	Width 62mm
	Height 17mm
	Automotive Standard No

Datasheet - FP100R12KT4BOSA1

Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1

This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.

Features and Benefits:

• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules

What gate-drive constraint should be observed?

The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.

How does thermal tolerance affect cooling design?

A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.

What electrical stress does the module withstand during blocking?

It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.

How many switching elements are present internally?

The module contains seven transistors to support multi-switch topologies.

Are there any material restrictions for selection?

The unit conforms to RoHS requirements and therefore excludes certain restricted substances.