Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V
- RS 제품 번호:
- 244-5846
- 제조사 부품 번호:
- FP75R12KT4B11BOSA1
- 제조업체:
- Infineon
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 244-5846
- 제조사 부품 번호:
- FP75R12KT4B11BOSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 385 W | |
| Number of Transistors | 7 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 385 W | ||
Number of Transistors 7 | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.
Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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