Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

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  • 2027년 2월 17일 부터 배송
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포장 옵션
RS 제품 번호:
244-5387
제조사 부품 번호:
FP15R12W1T4BOMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

130W

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

33.8mm

Series

FP15R12W1T4B

Length

62.8mm

Height

12mm

Automotive Standard

No

Infineon FP15R12W1T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 130W Power Dissipation - FP15R12W1T4BOMA1


This IGBT module is a power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power electronics. It delivers controlled switching capability for demanding thermal and electrical environments, operating across a wide temperature span and conforming to RoHS requirements.

Features and Benefits:


• Vceo rating of 1200 V affords high-voltage switching capability
• Power dissipation up to 130 W enables sustained thermal load handling
• Gate-emitter withstand up to 20 V supports robust gate‑drive margins
• Collector-emitter saturation of 2.25 V reduces conduction losses
• Seven transistors provide multi-device switching within one package

Applications


• Suitable for industrial motor-drive inverter stages
• Used with high-voltage DC-DC conversion systems
• Ideal for power-factor correction and soft-switching stages
• Can be used for switched-mode power supplies in utilities
• Used for medium-frequency traction and industrial converters

What ambient temperatures can it reliably operate within?


It maintains operation from −40 °C up to 150 °C.

How does the module address hazardous-substance restrictions?


It is manufactured to meet RoHS compliance for restricted materials.

What are the external mounting space considerations?


The package measures 33.8 x 62.8 x 12 mm for footprint and height planning.

How many semiconductor switches are integrated in the package?


The construction includes seven individual transistors.

What conduction performance can be expected under load?


Expect a maximum collector-emitter saturation voltage of 2.25 V during conduction.

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