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STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface

RS 제품 번호:: 330-362
제조사 부품 번호:: GH50H65DRB2-7AG
제조업체:: STMicroelectronics

STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface

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Subtotal (1 unit)*

₩5,038.40

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1,850 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 330-362
제조사 부품 번호:: GH50H65DRB2-7AG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	108A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	385W
	Number of Transistors	1
	Package Type	H2PAK-7
	Mount Type	Surface
	Pin Count	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Height	4.8mm
	Length	15.25mm
	Width	24.3 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 108A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 385W
	Number of Transistors 1
	Package Type H2PAK-7
	Mount Type Surface
	Pin Count 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Height 4.8mm
	Length 15.25mm
	Width 24.3 mm
	Automotive Standard AEC-Q101

Datasheet - GH50H65DRB2-7AG

COO (Country of Origin):: CN

The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

AEC-Q101 qualified

Maximum junction temperature TJ equal to 175 °C

High speed switching series

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Co-packed with high ruggedness rectifier diode

Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface

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