STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

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RS 제품 번호:
214-951
제조사 부품 번호:
SCT025H120G3AG
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

H2PAK-7

Series

SCT025H120G3AG

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.7V

Maximum Gate Source Voltage Vgs

22V

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Height

4.8mm

Length

15.25mm

Standards/Approvals

AEC-Q101, RoHS

Width

10.4mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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