제조사부품번호

STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

RS 제품 번호:: 214-951
제조사 부품 번호:: SCT025H120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

Subtotal (1 reel of 1000 units)*

₩40,348,560.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
1000 +	₩40,348.56	₩40,347,620.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-951
제조사 부품 번호:: SCT025H120G3AG
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N, Type N
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	H2PAK-7
	Series	SCT025H120G3AG
	Mount Type	Surface, Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.7V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Power Dissipation Pd	375W
	Maximum Operating Temperature	175°C
	Length	15.25mm
	Height	4.8mm
	Width	10.4 mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N, Type N
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1200V
	Package Type H2PAK-7
	Series SCT025H120G3AG
	Mount Type Surface, Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.7V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Power Dissipation Pd 375W
	Maximum Operating Temperature 175°C
	Length 15.25mm
	Height 4.8mm
	Width 10.4 mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - SCT025H120G3AG

COO (Country of Origin):: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

관련된 링크들