STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

모든 MOSFETs 열람하기
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
214-951
제조사 부품 번호:
SCT025H120G3AG
제조업체:
STMicroelectronics
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Series

SCT025H120G3AG

Package Type

H2PAK-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

2.7V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

175°C

Length

15.25mm

Width

10.4mm

Height

4.8mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

관련된 링크들