STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

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RS 제품 번호:
214-951
제조사 부품 번호:
SCT025H120G3AG
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Series

SCT025H120G3AG

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

55 A

Maximum Drain Source Voltage (Vds)

1.2 kV

Channel Mode

Enhancement

Pin Count

7

Package Type

H2PAK-7

Automotive Standard

AEC-Q101

Forward Voltage (Vf)

2.7 V

Height

4.8 mm

Length

15.25 mm

Maximum Drain Source Resistance (Rds)

27 mΩ

Maximum Gate Source Voltage (Vgs)

22 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

375 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

AEC-Q101, RoHS

Typical Gate Charge (Qg) @ Vgs

73 nC

Width

10.4 mm

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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