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STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

RS 제품 번호:: 214-951
제조사 부품 번호:: SCT025H120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

Subtotal (1 reel of 1000 units)*

₩40,348,560.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	릴당*
1000 +	₩40,348.56	₩40,347,620.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-951
제조사 부품 번호:: SCT025H120G3AG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT025H120G3AG
	Package Type	H2PAK-7
	Mount Type	Surface, Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	73nC
	Forward Voltage Vf	2.7V
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Length	15.25mm
	Height	4.8mm
	Width	10.4 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT025H120G3AG
	Package Type H2PAK-7
	Mount Type Surface, Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 73nC
	Forward Voltage Vf 2.7V
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Length 15.25mm
	Height 4.8mm
	Width 10.4 mm
	Automotive Standard AEC-Q101

Datasheet - SCT025H120G3AG

COO (Country of Origin):: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

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