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STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

RS 제품 번호:: 285-637
제조사 부품 번호:: STGHU30M65DF2AG
제조업체:: STMicroelectronics

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

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Subtotal (1 reel of 600 units)*

₩3,283,608.00

일시적 품절

2026년 7월 20일 부터 배송

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수량	한팩당	릴당*
600 +	₩5,472.68	₩3,283,720.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 285-637
제조사 부품 번호:: STGHU30M65DF2AG
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	84A
	Maximum Collector Emitter Voltage Vceo	650V
	Number of Transistors	1
	Maximum Power Dissipation Pd	441W
	Configuration	Dual Gate
	Package Type	HU3PAK
	Mount Type	Surface
	Pin Count	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101
	Height	3.6mm
	Width	14.1 mm
	Length	11.9mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type IGBT
	Maximum Continuous Collector Current Ic 84A
	Maximum Collector Emitter Voltage Vceo 650V
	Number of Transistors 1
	Maximum Power Dissipation Pd 441W
	Configuration Dual Gate
	Package Type HU3PAK
	Mount Type Surface
	Pin Count 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101
	Height 3.6mm
	Width 14.1 mm
	Length 11.9mm
	Automotive Standard AEC-Q101

Datasheet - STGHU30M65DF2AG

This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

6 μs of minimum short circuit withstand time

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

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