STMicroelectronics IGBT, 30 A 650 V H2PAK-2, Through Hole
- RS 제품 번호:
- 248-4893
- 제조사 부품 번호:
- STGH30H65DFB-2AG
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 1000 units)*
₩4,303,320.00
일시적 품절
- 2027년 3월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 1000 | ₩4,303.32 | ₩4,302,756.00 |
| 2000 - 2000 | ₩4,216.84 | ₩4,216,652.00 |
| 3000 + | ₩4,090.88 | ₩4,090,316.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 248-4893
- 제조사 부품 번호:
- STGH30H65DFB-2AG
- 제조업체:
- STMicroelectronics
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | H2PAK-2 | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.7mm | |
| Width | 15.8 mm | |
| Length | 10.4mm | |
| Series | STGH30H65DFB | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type H2PAK-2 | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Operating Temperature 175°C | ||
Height 4.7mm | ||
Width 15.8 mm | ||
Length 10.4mm | ||
Series STGH30H65DFB | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
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