STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS 제품 번호:
- 215-220
- 제조사 부품 번호:
- SCT012H90G3AG
- 제조업체:
- STMicroelectronics
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Subtotal (1 unit)*
₩66,326.40
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-220
- 제조사 부품 번호:
- SCT012H90G3AG
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.8V | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.8V | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Operating Temperature 175°C | ||
Width 10.4 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 4.8mm | ||
Length 15.25mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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