Infineon HEXFET Type P-Channel MOSFET, 2.3 A, 30 V Enhancement, 3-Pin SOT-23

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
913-4064
제조사 부품 번호:
IRLML9303TRPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
PH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

관련된 링크들