Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

RS 제품 번호:: 913-4051
제조사 부품 번호:: IRLML0040TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩406,080.00

재고있음

6,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 12000	₩135.36	₩404,952.00
15000 +	₩131.60	₩397,056.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 913-4051
제조사 부품 번호:: IRLML0040TRPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF

This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.

Features & Benefits

• Low RDS(on) of 56mΩ reduces switching losses

• Supports enhancement mode for efficient power control

• Maximum continuous drain current of 3.6A for steadfast operation

• Operates at a maximum drain-source voltage of 40V

• Designed for surface mount technology, perfect for compact designs

• Compatible with HEXFET technology for high performance

Applications

• Ideal for load and system switch

• Utilised in DC motor drive systems

• Effective for high-speed switching and amplifiers

• Suitable for surface mount in compact circuitry

• Employed in various power electronic circuits

What is the thermal resistance of this device?

The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.

How does the gate threshold voltage impact device performance?

The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.

Can it handle pulsed drain currents?

Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.

What factors influence the maximum power dissipation of this component?

Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.