Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩174,652.00

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  • 2026년 1월 15일 부터 950 개 단위 배송
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한팩당
Per Tube*
50 - 50₩3,493.04₩174,670.80
100 - 150₩3,417.84₩170,873.20
200 +₩3,340.76₩167,075.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
913-3932
제조사 부품 번호:
IRFB4227PBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
CN

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