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Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF

RS 제품 번호:: 257-5514
제조사 부품 번호:: IRFB4127PBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF

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Subtotal (1 tube of 100 units)*

₩459,600.00

추가로 2026년 10월 26일 부터 700 개 단위 배송

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수량	한팩당	Per Tube*
100 - 400	₩4,596.00	₩459,700.00
500 - 900	₩4,506.00	₩450,520.00
1000 +	₩4,414.00	₩441,480.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-5514
제조사 부품 번호:: IRFB4127PBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	76A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	PCB
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 76A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type PCB
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFB4127PBF

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 375W Maximum Power Dissipation - IRFB4127PBF

This MOSFET is a high-voltage, enhancement-mode N-channel transistor designed for PCB mounting in a TO-220 package. It is intended for power switching and control tasks where substantial current handling and thermal capacity are required, and it operates across an extended industrial temperature range while meeting RoHS restrictions.

Features and Benefits:

• 20mΩ Rds(on) enabling reduced conduction losses
• 76A continuous drain current supporting high-load switching
• 200V drain-source rating permitting high-voltage applications
• 375W power dissipation improving thermal headroom
• 1.3V forward voltage minimising gate drive drop

Applications

• Suitable for power-supply switching in industrial systems
• Used with motor drivers requiring high current handling
• Ideal for DC-DC converters in high-voltage rails
• Can be used for inverter-stage switching on PCBs

What gate voltage limits must be observed?

The gate-to-source voltage must not exceed 20V to avoid damaging the gate dielectric.

What temperature range can it withstand during operation?

It is specified to function between -55°C and 175°C for broad industrial use.

Is the device suitable for surface mounting on circuit boards?

It is intended for PCB mounting in a through-hole TO-220 package for secure thermal and mechanical attachment.

Does it conform to environmental material restrictions?

The component is RoHS-compliant, meeting required restrictions on hazardous substances.