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Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF

RS 제품 번호:: 257-9354
제조사 부품 번호:: IRFB5615PBF
제조업체:: Infineon

Infineon HEXFET N-Channel MOSFET, 35 A, 150 V Enhancement TO-220 IRFB5615PBF

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Subtotal (1 tube of 100 units)*

₩162,600.00

추가로 2026년 10월 26일 부터 900 개 단위 배송

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수량	한팩당	Per Tube*
100 - 400	₩1,626.00	₩162,640.00
500 - 900	₩1,578.00	₩157,740.00
1000 +	₩1,530.00	₩153,040.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9354
제조사 부품 번호:: IRFB5615PBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	39mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 39mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFB5615PBF

Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 35A Maximum Continuous Drain Current - IRFB5615PBF

This MOSFET is a through-hole power transistor designed for switching and power conversion in demanding environments. It operates as an enhancement-mode N-channel device in a TO-220 package, suitable for installations requiring a robust drain-source voltage rating and substantial continuous current handling. The component meets RoHS requirements and is rated for a wide thermal span suited to industrial conditions.

Features and Benefits:

• 150V drain-source rating enables high-voltage switching applications
• 35A continuous current supports high-current power supplies
• 39mΩ low Rds(on) minimises conduction losses during operation
• -55°C to +175°C operating range permits use across extreme temperatures
• 1.3V forward gate voltage reduces drive requirements for switching

Applications

• Suitable for motor-drive power stages
• Ideal for high-current switch-mode power supplies
• Used with discrete power-control modules in industrial systems
• Can be used for high-voltage DC switching tasks

What package type should I expect for PCB mounting?

It is supplied in a TO-220 through-hole package suitable for secure soldered mounting.

How does the channel type affect switching polarity?

The N-channel configuration requires positive gate drive relative to source for conduction.

Is this component intended for automotive qualification?

It is not specified to conform to automotive-grade standards.

What standard environmental restriction is adhered to?

The device complies with RoHS directives limiting certain hazardous substances.