Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF
- RS 제품 번호:
- 650-4277
- 제조사 부품 번호:
- IRFB4227PBF
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩4,474.40
일시적 품절
- 2026년 1월 22일 부터 989 개 단위 배송
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* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 650-4277
- 제조사 부품 번호:
- IRFB4227PBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 330W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 330W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard No | ||
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