Infineon SIPMOS N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23

RS 제품 번호:: 911-4971
제조사 부품 번호:: BSS126H6327XTSA2
제조업체:: Infineon

Infineon SIPMOS N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 3000 units)*

₩822,000.00

일시적 품절

2027년 1월 11일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 12000	₩274.00	₩820,200.00
15000 +	₩268.00	₩804,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 911-4971
제조사 부품 번호:: BSS126H6327XTSA2
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Typical Gate Charge Qg @ Vgs	1.4nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Width	1.3mm
	Standards/Approvals	No
	Length	2.9mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Typical Gate Charge Qg @ Vgs 1.4nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Width 1.3mm
	Standards/Approvals No
	Length 2.9mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: DE

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2

This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads

Applications

• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies

What package type is used for compact PCB mounting?

It is supplied in a small SOT-23 surface-mount package for dense board layouts.

How does it perform across temperature extremes?

The device is specified to operate from -55°C up to 150°C for broad environmental ranges.

What is the diode forward characteristic for reverse conduction considerations?

The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.

What pin configuration and count should I expect when designing footprints?

The device utilises three pins, consistent with single-transistor SOT-23 layouts.