Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

RS 제품 번호:: 236-4398
제조사 부품 번호:: BSS126IXTSA1
제조업체:: Infineon

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 10 units)*

₩3,620.00

추가로 2026년 10월 05일 부터 4,190 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 10	₩362.00	₩3,620.00
20 - 90	₩354.00	₩3,540.00
100 - 240	₩348.00	₩3,480.00
250 - 490	₩344.00	₩3,440.00
500 +	₩334.00	₩3,340.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 236-4398
제조사 부품 번호:: BSS126IXTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Series	SIPMOS®
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	0.5W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1.4nC
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	No
	Width	1.4mm
	Length	3mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Series SIPMOS®
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 0.5W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1.4nC
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals No
	Width 1.4mm
	Length 3mm
	Automotive Standard No

Datasheet - BSS126IXTSA1

Infineon SIPMOS® Series MOSFET, 600V Maximum Drain Source Voltage, 0.5W Maximum Power Dissipation - BSS126IXTSA1

This MOSFET is a small-signal, N-channel depletion-mode transistor designed for surface-mounted electronics requiring high-voltage switching in Compact footprints. It operates across a wide temperature range and is intended for low-current applications where a depletion-mode device is preferred to provide normally-on behaviour and simplified gate control.

Features and Benefits:

• Maximum drain-source voltage 600 V enables high-voltage switching
• Maximum continuous drain current 21 mA supports low-power circuits
• Maximum drain-source resistance 700 Ω limits on-state conduction
• Forward voltage 1.2 V reduces voltage drop in driven paths
• Typical gate charge 1.4 nC allows modest gate-drive energy
• Maximum power dissipation 0.5 W suits low-power thermal budgets

Applications

• Suitable for high-voltage biasing networks in analogue designs
• Ideal for low-current protection circuits and bleeder resistors
• Used with small-signal drivers requiring depletion-mode behaviour
• Can be used for current steering in sensor front-ends
• Appropriate for Compact power-management subcircuits in converters

What gate voltage range can be applied safely?

A gate-to-source potential up to 20 V is permissible for normal operation.

What thermal range will the device tolerate during use?

It is rated to function between −55 °C and 150 °C for varied environments.

How is the component packaged for PCB assembly?

It is supplied in a SOT-23 surface-mount package suitable for automated placement.

What mechanical envelope should be allowed on the PCB footprint?

The package measures approximately 3 mm length, 1.4 mm width and 1.1 mm height for land-pattern planning.

Does the device meet automotive-grade classification?

It is not specified as an automotive-standard component and should not be assumed to meet those criteria.