Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1

RS 제품 번호:: 354-5720
Distrelec 제품 번호:: 302-83-878
제조사 부품 번호:: BSP149H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1

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Subtotal (1 unit)*

₩1,898.80

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추가로 2025년 12월 29일 부터 401 개 단위 배송
추가로 2026년 1월 05일 부터 1,550 개 단위 배송

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수량	한팩당
1 - 249	₩1,898.80
250 - 499	₩1,861.20
500 +	₩1,823.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 354-5720
Distrelec 제품 번호:: 302-83-878
제조사 부품 번호:: BSP149H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Length	6.5mm
	Width	3.5 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101
	Distrelec Product Id	302-83-878

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Length 6.5mm
	Width 3.5 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101
	Distrelec Product Id 302-83-878

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1

This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.

Features & Benefits

• Maximum drain-source voltage of 200V for high voltage applications

• Continuous drain current capability of up to 660mA

• Utilises SIPMOS technology for consistent performance

• RoHS compliant with Pb-free lead plating

• dv/dt rated for improved resilience against voltage variations

Applications

• Driver in automation systems

• Switching power supplies for energy management

• Automotive electronics compliant with AEC-Q101 standards

What is the significance of the depletion mode characteristic?

The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.

How does the device manage thermal challenges?

It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.

What are the gate threshold voltage values for this component?

The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.

What are the implications of the ESD Class rating?

The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.