Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1

RS 제품 번호:: 354-5708
Distrelec 제품 번호:: 302-83-876
제조사 부품 번호:: BSP135H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1

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Subtotal (1 unit)*

₩2,199.60

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수량	한팩당
1 - 249	₩2,199.60
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RS 제품 번호:: 354-5708
Distrelec 제품 번호:: 302-83-876
제조사 부품 번호:: BSP135H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	45Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.7nC
	Maximum Operating Temperature	150°C
	Width	3.5 mm
	Standards/Approvals	No
	Length	6.5mm
	Height	1.6mm
	Distrelec Product Id	302-83-876
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 45Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.7nC
	Maximum Operating Temperature 150°C
	Width 3.5 mm
	Standards/Approvals No
	Length 6.5mm
	Height 1.6mm
	Distrelec Product Id 302-83-876
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1

This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.

Features & Benefits

• Utilises SIPMOS® technology for enhanced efficiency

• Supports high voltage capacities up to 600V for operational reliability

• Low power consumption rated at 120mA improves energy efficiency

• Designed for surface mount applications, providing space-saving benefits

• ESD protection rated for 1A to safeguard sensitive circuits

• Automotive qualified under AEC-Q101, conforming to industry standards

Applications

• Suitable for power management solutions in electronic devices

• Utilised in low voltage with high voltage capabilities

• Integrated in packaging for efficient thermal management

• Used in control circuits that require robust components

What are the implications of the thermal resistance values for performance?

The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.

Can this MOSFET handle high-frequency switching applications?

Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.

What should be considered regarding installation and compatibility?

It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.

How does the maximum power dissipation impact its application?

With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.

What are the limitations regarding gate-source voltage?

The gate-source voltage can range from -20V to +20V, which must be adhered to in order to maintain effective operation without damaging the device or compromising performance.