제조사부품번호

Infineon SIPMOS Type N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1

RS 제품 번호:: 165-5867
제조사 부품 번호:: BSS131H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1

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RS 제품 번호:: 165-5867
제조사 부품 번호:: BSS131H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	110mA
	Maximum Drain Source Voltage Vds	240V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.81V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Typical Gate Charge Qg @ Vgs	2.1nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 110mA
	Maximum Drain Source Voltage Vds 240V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.81V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Typical Gate Charge Qg @ Vgs 2.1nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 110mA Maximum Continuous Drain Current - BSS131H6327XTSA1

This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for surface-mount power switching in compact electronics. It operates across a wide temperature span suited to demanding environments and is intended for applications requiring controlled drain-source conduction with a moderate continuous current capability.

Features and Benefits:

• 240V drain-source rating enables high-voltage switching
• 110 mA continuous drain capability supports low-current loads
• 20V gate-source limit protects against excessive gate stress
• 20 Ω maximum RDS(on) simplifies thermal management at low currents
• 2.1 nC typical gate charge reduces drive energy requirements
• 360 mW power dissipation suits small form-factor thermal budgets

Applications

• Suitable for automotive sensor power switching
• Ideal for battery-management control circuitry
• Used for low-current motor-driver gate stages
• Can be used for level-shift and protection functions
• Used with handheld and portable instrumentation

What package and mounting method does it use for PCB assembly?

It is supplied in a SOT-23 package configured for surface-mount placement to suit automated soldering processes.

What environmental extremes can it withstand during operation?

The device is rated to operate from -55 °C up to 150 °C to accommodate wide thermal excursions.

How compact is the device for space-constrained designs?

The package footprint measures 2.9mm in length and 1.3mm in width while the component height is 1.0mm for tight-layout applications.

Does it meet any automotive qualification standard for vehicle use?

It conforms to the AEC‑Q101 automotive standard for semiconductor stress screening.