Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 250 units)*

₩67,210.00

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250 - 500₩268.84₩67,398.00
750 - 1250₩265.08₩66,223.00
1500 +₩259.44₩65,048.00

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RS 제품 번호:
827-0134
제조사 부품 번호:
BSS215PH6327XTSA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.18A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS P

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Typical Gate Charge Qg @ Vgs

3.6nC

Maximum Operating Temperature

150°C

Width

1.3 mm

Height

1mm

Standards/Approvals

No

Length

2.9mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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