Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

RS 제품 번호:: 826-9272
제조사 부품 번호:: BSP297H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223 BSP297H6327XTSA1

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Subtotal (1 pack of 50 units)*

₩44,932.00

재고있음

추가로 2025년 12월 29일 부터 200 개 단위 배송

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수량	한팩당	한팩당*
50 - 200	₩898.64	₩44,894.40
250 +	₩881.72	₩44,104.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-9272
제조사 부품 번호:: BSP297H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.84V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.5mm
	Height	1.6mm
	Width	3.5 mm
	Distrelec Product Id	304-44-414
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.84V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.5mm
	Height 1.6mm
	Width 3.5 mm
	Distrelec Product Id 304-44-414
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency

• Low gate threshold voltage ensures compatibility with logic levels

• High voltage ratings accommodate a range of applications

• Enhanced power dissipation capabilities support effective thermal management

• AEC-Q101 qualification adheres to automotive industry standards

• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems

• Applied in power management for consumer electronics

• Used in battery management systems for energy regulation

• Employed in signal amplification within communication devices

• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?

The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.