Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1

RS 제품 번호:: 826-9276
Distrelec 제품 번호:: 304-44-411
제조사 부품 번호:: BSP125H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1

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Subtotal (1 pack of 50 units)*

₩59,800.00

일시적 품절

2026년 10월 26일 부터 배송

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수량	한팩당	한팩당*
50 - 200	₩1,196.00	₩59,760.00
250 - 450	₩1,166.00	₩58,280.00
500 +	₩1,148.00	₩57,360.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-9276
Distrelec 제품 번호:: 304-44-411
제조사 부품 번호:: BSP125H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120mA
	Maximum Drain Source Voltage Vds	600V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	45Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.4nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.5mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120mA
	Maximum Drain Source Voltage Vds 600V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 45Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.4nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.5mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 120mA Maximum Continuous Drain Current - BSP125H6327XTSA1

This MOSFET is a high-voltage N-channel switching device designed for surface-mounted power applications in demanding environments. It operates across a wide temperature range and is intended for circuits requiring high drain‑to‑source blocking capability and controlled switching behaviour. The package supports automated PCB assembly and is suited to electronic systems in transportation and industrial contexts.

Features and Benefits:

• 600V drain‑source rating enables high-voltage switching capability
• 45Ω maximum Rds reduces leakage in off-state conditions
• 4.4nC typical gate charge for faster gate transitions
• 120mA continuous drain current for low-current power stages
• 0.8V forward voltage minimises conduction drop in diode path
• 1.8W maximum dissipation supports modest power handling

Applications

• Suitable for automotive high-voltage auxiliary circuits
• Ideal for input-stage switching in power supplies
• Used with industrial sensor interfaces requiring isolation
• Can be used for small motor driver protection elements
• Practical for battery management and charging subsystems

What mounting method is required for board assembly?

It is supplied in a surface-mount SOT-223 style package intended for soldered PCB attachment and reflow processes.

How does it behave across temperature extremes?

Rated to operate from -55°C to 150°C, the device maintains switching function and specified limits throughout that thermal span.

What gate voltage limits should designers observe?

The maximum gate‑to‑source voltage is 20V, so drive circuits must not exceed this amplitude to avoid damage.

Are there constraints on pulse versus continuous current?

The specified continuous drain capability is 120mA

higher transient currents would require thermal and safe‑operating‑area assessment.