Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223

RS 제품 번호:: 911-0929
제조사 부품 번호:: BSP297H6327XTSA1
제조업체:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

₩488,800.00

일시적 품절

2026년 3월 16일 부터 배송

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수량	한팩당	릴당*
1000 - 4000	₩488.80	₩488,800.00
5000 +	₩479.40	₩479,024.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 911-0929
제조사 부품 번호:: BSP297H6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	660mA
	Maximum Drain Source Voltage Vds	200V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	0.84V
	Typical Gate Charge Qg @ Vgs	12.9nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Standards/Approvals	No
	Width	3.5 mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 660mA
	Maximum Drain Source Voltage Vds 200V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 0.84V
	Typical Gate Charge Qg @ Vgs 12.9nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Standards/Approvals No
	Width 3.5 mm
	Height 1.6mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1

This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits

• N-channel configuration improves switching efficiency

• Low gate threshold voltage ensures compatibility with logic levels

• High voltage ratings accommodate a range of applications

• Enhanced power dissipation capabilities support effective thermal management

• AEC-Q101 qualification adheres to automotive industry standards

• Compact SOT-223 package supports space-efficient designs

Applications

• Utilised for motor control in automotive systems

• Applied in power management for consumer electronics

• Used in battery management systems for energy regulation

• Employed in signal amplification within communication devices

• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?

The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?

Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?

It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?

Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?

The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.