제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF

RS 제품 번호:: 725-9353
제조사 부품 번호:: IRLML2030TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩3,083.20

재고있음

520 개 단위 배송 준비 완료
추가로 2025년 12월 31일 부터 2,000 개 단위 배송

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수량	한팩당	한팩당*
20 - 740	₩154.16	₩3,083.20
760 - 1480	₩150.40	₩3,026.80
1500 +	₩146.64	₩2,951.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 725-9353
제조사 부품 번호:: IRLML2030TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Width	1.4 mm
	Distrelec Product Id	304-45-312
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Width 1.4 mm
	Distrelec Product Id 304-45-312
	Automotive Standard No

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