Name: Infineon LogicFET Type N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF
Brand: Infineon
SKU: 543-1544
Price: 2838.80 KRW
Availability: OutOfStock

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	104A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220AB
	Series	LogicFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	130nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 104A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220AB
	Series LogicFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 130nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Automotive Standard No

Infineon LogicFET Series MOSFET, 104A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL2505PBF

This MOSFET is designed for high-performance applications that require efficient energy management. With a maximum continuous drain current of 104A and a drain-source voltage capability of up to 55V, it is a competitive option for the market. Its robust construction and advanced specifications make it suitable for various automation and electronic applications.

Features & Benefits

• Low on-resistance of 8mΩ reduces heat generation

• Maximum power dissipation of 200 W enhances performance

• Through-hole mounting style allows for easier integration

• Low gate charge requirement improves operational efficiency

• Enhancement mode design ensures performance in challenging conditions

Applications

• Power switching for effective control

• Motor driving circuits for speed and torque regulation

• Automated systems requiring high current management

• Power supplies and conversion circuits to maintain stable output

• Industrial machinery for enhanced power handling

What is the gate threshold voltage for use?

The gate threshold voltage is between 1V and 2V, providing flexibility for various applications.

How does temperature affect performance?

This device can operate effectively within a temperature range of -55°C to +175°C, making it suitable for harsh environmental conditions.

Can it handle pulsed current operations?

Yes, it can manage pulsed drain currents up to 360A, ensuring reliability during short-duration applications.

What level of voltage can be managed across the drain-source?

It supports a maximum voltage of 55V, which is ideal for most general-purpose applications.

Is specific handling required during installation?

Standard precautions should be observed, such as avoiding excessive heat during soldering and maintaining a suitable operating environment to ensure longevity.

Infineon LogicFET Type N-Channel MOSFET, 104 A, 55 V Enhancement, 3-Pin TO-220AB IRL2505PBF