Name: Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF
Brand: Infineon
SKU: 540-9979
Price: 2782.40 KRW
Availability: OutOfStock

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 140A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL3803PBF

This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.

Features & Benefits

• Fast switching speed enhances overall system performance
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design

Applications

• Used in power management circuits and motor control
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system

What are the maximum ratings for continuous drain current?

The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.

How does the component handle thermal management?

It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.

What is the significance of its enhancement mode?

The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.

What specific voltage ratings does it support?

It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.

Can it handle high temperature environments?

Yes, it operates efficiently in extreme conditions, with a junction temperature rating of up to +175°C.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	140 A
	Maximum Drain Source Voltage	30 V
	Series	LogicFET
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	140 nC @ 4.5 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Length	10.67mm
	Width	4.83mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	9.02mm

	모두 선택
	브랜드 Infineon
	Channel Type N
	Maximum Continuous Drain Current 140 A
	Maximum Drain Source Voltage 30 V
	Series LogicFET
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 140 nC @ 4.5 V
	Transistor Material Si
	Number of Elements per Chip 1
	Length 10.67mm
	Width 4.83mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 9.02mm

Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF