Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220 IRL1004PBF

RS 제품 번호:: 541-2105
Distrelec 제품 번호:: 303-41-389
제조사 부품 번호:: IRL1004PBF
제조업체:: Infineon

Infineon LogicFET Type N-Channel MOSFET, 130 A, 40 V Enhancement, 3-Pin TO-220 IRL1004PBF

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Subtotal (1 unit)*

₩4,267.60

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추가로 2025년 12월 29일 부터 267 개 단위 배송
추가로 2026년 1월 05일 부터 432 개 단위 배송

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수량	한팩당
1 - 12	₩4,267.60
13 - 24	₩4,154.80
25 +	₩4,098.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 541-2105
Distrelec 제품 번호:: 303-41-389
제조사 부품 번호:: IRL1004PBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	LogicFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	200W
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	100nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No
	Distrelec Product Id	30341389

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series LogicFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 200W
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 100nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No
	Distrelec Product Id 30341389

COO (Country of Origin):: CN

Infineon LogicFET Series MOSFET, 130A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL1004PBF

This high-performance MOSFET employs Si technology and is designed for efficient power management in a variety of electronic applications. The enhancement mode N-channel structure ensures effective operation, making it suitable for modern automation and electrical systems, particularly in high power circuits.

Features & Benefits

• Continuous drain current capacity of up to 130A

• Maximum drain-source voltage of 40V ensuring robust performance

• Low Rds(on) of 7mΩ to decrease heat generation

• High thermal stability with a maximum operating temperature of +175°C

• Compact TO-220AB package allows for versatile mounting options

Applications

• High-efficiency power supply circuits

• Automotive and industrial automation systems

• Energy management and conversion systems

How does the Rds(on) contribute to the efficiency of the device?

A low Rds(on) of 7mΩ minimises power losses during operation, thereby reducing heat and enhancing overall efficiency in power applications.

What is the significance of the operating temperature range?

The device is capable of functioning within a wide temperature range of -55°C to +175°C, ensuring dependable performance across diverse environmental conditions and minimising the risk of thermal failure.

Can it be used for high-frequency switching applications?

Yes, it is designed for fast switching capabilities, making it suitable for high-frequency operations, thus improving performance in communication and control systems.

What considerations should be taken for installation?

Utilise appropriate thermal management techniques, such as a suitable heatsink, as high-power devices need effective heat dissipation to maintain functionality and reliability.

What happens if the gate-source voltage exceeds the maximum rating?

Exceeding the maximum gate-source voltage may result in device failure, so it is vital to adhere to the specified limits to ensure longevity and prevent damage.