Infineon LogicFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-220 IRL520NPBF

RS 제품 번호:: 541-1196
Distrelec 제품 번호:: 303-41-391
제조사 부품 번호:: IRL520NPBF
제조업체:: Infineon

Infineon LogicFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-220 IRL520NPBF

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RS 제품 번호:: 541-1196
Distrelec 제품 번호:: 303-41-391
제조사 부품 번호:: IRL520NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	100V
	Series	LogicFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	16 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Distrelec Product Id	30341391
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 100V
	Series LogicFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 16 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Distrelec Product Id 30341391
	Automotive Standard No

Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF

This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

Features & Benefits

• High power dissipation capacity of 48W for robust performance

• Low drain-source resistance of 180mΩ enhances efficiency

• Wide operating temperature range from -55°C to +175°C ensures reliability

• Suitable for through-hole mounting, facilitating easy integration

• Enhanced gate threshold voltage between 1V and 2V optimises control

• Single transistor configuration simplifies design and assembly

Applications

• Utilised in power supply circuits for efficient voltage regulation

• Employed in motor control systems due to its high current capacity

• Applicable in industrial automation for effective switching operations

• Integrated into power management solutions for energy-efficient designs

What type of cooling method is recommended for optimal performance?

Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

Can it be directly replaced with other MOSFETs?

While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

What is the recommended maximum gate-source voltage?

The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

How should I handle this MOSFET during installation?

Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.

Is it suitable for high-frequency applications?

This MOSFET is suitable for switching applications, but care should be taken regarding gate drive speed and load conditions to avoid performance degradation at higher frequencies.