Infineon CoolGaN Power Transistor, 60 A, 600 V Enhancement, 20-Pin PG-DSO-20-85

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩19,138.40

Add to Basket
수량 선택 또는 입력
일시적 품절
  • 30 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 24₩19,138.40
25 - 49₩17,390.00
50 - 99₩17,032.80
100 - 249₩15,942.40
250 +₩14,720.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
273-2752
제조사 부품 번호:
IGO60R070D1AUMA2
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

Power Transistor

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-DSO-20-85

Series

CoolGaN

Mount Type

Surface

Pin Count

20

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

4.5 V

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Reduces EMI

System cost reduction savings

Capable of reverse conduction

Superior commutation ruggedness

Enables higher operating frequency

Low gate charge and low output charge

관련된 링크들