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Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

RS 제품 번호:: 351-882
제조사 부품 번호:: IGOT65R035D2AUMA1
제조업체:: Infineon

Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

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Subtotal (1 unit)*

₩22,689.72

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800 개 단위 배송 준비 완료

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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-882
제조사 부품 번호:: IGOT65R035D2AUMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	IGOT65
	Package Type	PG-DSO-20
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.075Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	134W
	Maximum Gate Source Voltage Vgs	10 V
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series IGOT65
	Package Type PG-DSO-20
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.075Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 134W
	Maximum Gate Source Voltage Vgs 10 V
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IGOT65R035D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGOT65 Type N-Channel MOSFET, 44 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1

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