Infineon CoolGaN Power Transistor, 15 A, 600 V Enhancement, 8-Pin PG-LSON-8-1 IGLD60R070D1AUMA3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
RS 제품 번호:
273-2749
제조사 부품 번호:
IGLD60R070D1AUMA3
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

Power Transistor

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Series

CoolGaN

Package Type

PG-LSON-8-1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-10 V

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

114W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Reduces EMI

System cost reduction savings

Capable of reverse conduction

Superior commutation ruggedness

Enables higher operating frequency

Low gate charge and low output charge

관련된 링크들