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Infineon IGOT65 N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

RS 제품 번호:: 351-880
제조사 부품 번호:: IGOT65R045D2AUMA1
제조업체:: Infineon

Infineon IGOT65 N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

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₩18,620.00

799 개 단위 배송 준비 완료

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1 - 9	₩18,620.00
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RS 제품 번호:: 351-880
제조사 부품 번호:: IGOT65R045D2AUMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-DSO-20
	Series	IGOT65
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.054Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	109W
	Maximum Gate Source Voltage Vgs	10V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-DSO-20
	Series IGOT65
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.054Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 109W
	Maximum Gate Source Voltage Vgs 10V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGOT65R045D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGOT65 N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

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