제조사부품번호

Vishay SiR N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

RS 제품 번호:: 268-8334
제조사 부품 번호:: SIR5710DP-T1-RE3
제조업체:: Vishay

Vishay SiR N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

Subtotal (3000 units, on reels of 3000)*

₩3,588,000.00

마지막 RS 재고

최종적인 6,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 +	₩1,196.00	₩3,588,000.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8334
제조사 부품 번호:: SIR5710DP-T1-RE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26.8A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK SO-8
	Series	SiR
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0315Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	56.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26.8A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK SO-8
	Series SiR
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0315Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 56.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIR5710DP-T1-RE3

COO (Country of Origin):: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SiR N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

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