Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP

N
모든 MOSFETs 열람하기
대량 구매 할인 기용 가능
View bulk pricing options

Subtotal (1 unit)*

₩4,742.00

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량
한팩당
1 - 9₩4,742.00
10 - 24₩3,086.00
25 - 99₩1,610.00
100 - 499₩1,588.00
500 +₩1,544.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
735-131
제조사 부품 번호:
SiR512DP
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

96.2W

Maximum Operating Temperature

150°C

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Length

7mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel TrenchFET Gen V power MOSFET designed for efficient power management in AI server solutions and high-current applications. It delivers 100V drain-source voltage capability with a low on-resistance of 4.5 mΩ at 10V gate drive for minimal power loss.

00A continuous drain current at TC=25°C

96.2W power dissipation rating

-55°C to +150°C operating temperature range

관련된 링크들