Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR512DP
- RS 제품 번호:
- 735-131
- 제조사 부품 번호:
- SiR512DP
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩4,623.45
일시적 품절
- 2026년 12월 22일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩4,623.45 |
| 10 - 24 | ₩3,008.85 |
| 25 - 99 | ₩1,569.75 |
| 100 - 499 | ₩1,548.30 |
| 500 + | ₩1,505.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 735-131
- 제조사 부품 번호:
- SiR512DP
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96.2W | |
| Forward Voltage Vf | 100V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 7mm | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Height | 2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96.2W | ||
Forward Voltage Vf 100V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 7mm | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Height 2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel TrenchFET Gen V power MOSFET designed for efficient power management in AI server solutions and high-current applications. It delivers 100V drain-source voltage capability with a low on-resistance of 4.5 mΩ at 10V gate drive for minimal power loss.
00A continuous drain current at TC=25°C
96.2W power dissipation rating
-55°C to +150°C operating temperature range
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