Vishay SiR N channel-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin PowerPAK SO-8 SiR5102DP

N
모든 MOSFETs 열람하기
대량 구매 할인 기용 가능
View bulk pricing options

Subtotal (1 unit)*

₩6,820.00

Add to Basket
수량 선택 또는 입력
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량
한팩당
1 - 9₩6,820.00
10 - 49₩4,226.00
50 - 99₩3,266.00
100 +₩2,214.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
735-165
제조사 부품 번호:
SiR5102DP
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

100V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0041Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

33.7nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Length

7mm

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

관련된 링크들