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Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

RS 제품 번호:: 268-8333
제조사 부품 번호:: SIR5708DP-T1-RE3
제조업체:: Vishay

Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

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RS 제품 번호:: 268-8333
제조사 부품 번호:: SIR5708DP-T1-RE3
제조업체:: Vishay

참조 문서

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제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.8A
	Maximum Drain Source Voltage Vds	150V
	Series	SiR
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	65.7W
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.8A
	Maximum Drain Source Voltage Vds 150V
	Series SiR
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 65.7W
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIR5708DP-T1-RE3

COO (Country of Origin):: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

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