Vishay SiH N channel-Channel MOSFET, 47 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SiHK045N60EF

N

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RS 제품 번호:
735-157
제조사 부품 번호:
SiHK045N60EF
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 10 x 12

Series

SiH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.045Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

600V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

10mm

Standards/Approvals

RoHS

Height

2mm

Length

13mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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