Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

RS 제품 번호:: 268-8293
제조사 부품 번호:: SIHB085N60EF-GE3
제조업체:: Vishay

Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

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Subtotal (1 pack of 2 units)*

₩22,380.00

1,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩11,190.00	₩22,380.00
10 - 18	₩10,070.00	₩20,140.00
20 - 98	₩9,850.00	₩19,700.00
100 - 498	₩8,240.00	₩16,480.00
500 +	₩8,050.00	₩16,100.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8293
제조사 부품 번호:: SIHB085N60EF-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Series SIHB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB085N60EF-GE3

Vishay SIHB Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHB085N60EF-GE3

This MOSFET is a high-voltage N-channel semiconductor device designed for power switching in surface-mount applications. It operates across a wide ambient temperature range and is suited to circuits requiring substantial drain current and elevated drain-source voltage capability. The component is supplied in a TO-263 package for thermal management on PCB-mounted power stages.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• 0.084Ω Rds(on) reduces conduction losses during operation
• 63nC total gate charge allows predictable gate-drive design
• 184W power dissipation assists high-power-density layouts
• Vgs 30V limit accommodates robust gate-voltage margins

Applications

• Ideal for power converters in industrial supplies
• Suitable for high-voltage inverter switching stages
• Used for motor-drive front-end switching transistors
• Can be used for telecoms power-rail regulation
• Recommended for switched-mode power supply primary switches

What package advantages assist PCB thermal design?

The TO-263 surface-mount format offers a large thermal pad and metal tab area to improve heat transfer to the board and external heatsinking arrangements.

How does gate charge affect drive circuitry selection?

The 63nC gate charge determines required driver current and switching losses

gate drivers must source and sink sufficient current for desired transition speeds to balance efficiency and EMI.

What temperature range can it withstand during operation?

The device is specified to operate from -55°C up to 150°C junction or ambient conditions as defined by system cooling, enabling use in harsh thermal environments.

Are there any regulatory restrictions noted for use?

The component complies with RoHS directives, indicating it meets restricted-substance requirements for electronic assemblies.