Vishay EF Type N-Channel MOSFET, 46 A, 650 V Depletion, 3-Pin TO-263 SIHB055N60EF-GE3
- RS 제품 번호:
- 239-8627
- 제조사 부품 번호:
- SIHB055N60EF-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩10,001.60
마지막 RS 재고
- 최종적인 992 개 unit(s)이 배송 준비 됨
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩10,001.60 |
| 10 - 24 | ₩9,813.60 |
| 25 - 99 | ₩9,644.40 |
| 100 - 499 | ₩9,456.40 |
| 500 + | ₩9,306.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-8627
- 제조사 부품 번호:
- SIHB055N60EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
4th generation E series technology
Low effective capacitance
Low switching and conduction losses
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