Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3

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포장 옵션
RS 제품 번호:
903-4504
제조사 부품 번호:
SiHB28N60EF-GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

123mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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