제조사부품번호

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

RS 제품 번호:: 261-5041
제조사 부품 번호:: SCT055HU65G3AG
제조업체:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

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대량 구매 할인 기용 가능

Subtotal (1 reel of 600 units)*

₩12,124,872.00

일시적 품절

2026년 12월 28일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
600 - 600	₩20,208.12	₩12,124,533.60
1200 - 1200	₩19,803.92	₩11,882,126.40
1800 +	₩19,209.84	₩11,525,565.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 261-5041
제조사 부품 번호:: SCT055HU65G3AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	Tape & Reel
	Mount Type	Surface
	Pin Count	7
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Gate Source Voltage Vgs	22 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	3.5mm
	Length	18.58mm
	Width	14 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type Tape & Reel
	Mount Type Surface
	Pin Count 7
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Gate Source Voltage Vgs 22 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 3.5mm
	Length 18.58mm
	Width 14 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - SCT055HU65G3AG

COO (Country of Origin):: MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package

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