Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP
- RS 제품 번호:
- 260-1203
- 제조사 부품 번호:
- IPDQ60R065S7XTMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 750 units)*
₩3,519,360.00
일시적 품절
- 2026년 5월 04일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 750 - 750 | ₩4,692.48 | ₩3,519,924.00 |
| 1500 - 1500 | ₩4,598.48 | ₩3,449,565.00 |
| 2250 + | ₩4,461.24 | ₩3,346,071.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 260-1203
- 제조사 부품 번호:
- IPDQ60R065S7XTMA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 195W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.5mm | |
| Height | 2.35mm | |
| Width | 15.1 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 195W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.5mm | ||
Height 2.35mm | ||
Width 15.1 mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
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