제조사부품번호

Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252

RS 제품 번호:: 258-3985
제조사 부품 번호:: IRFR6215TRLPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩2,408,280.00

일시적 품절

2026년 3월 16일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 3000	₩802.76	₩2,406,024.00
6000 - 6000	₩785.84	₩2,357,520.00
9000 +	₩770.80	₩2,310,708.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-3985
제조사 부품 번호:: IRFR6215TRLPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-13A
	Maximum Drain Source Voltage Vds	-150V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	580mΩ
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	110W
	Typical Gate Charge Qg @ Vgs	44nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -13A
	Maximum Drain Source Voltage Vds -150V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 580mΩ
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 110W
	Typical Gate Charge Qg @ Vgs 44nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFR6215TRLPBF

The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252

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