Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF

RS Stock No.:: 258-3986
Mfr. Part No.:: IRFR6215TRLPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

₩11,900.40

재고있음

추가로 2026년 2월 09일 부터 1,465 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

Units	Per unit	Per Pack*
5 - 5	₩2,380.08	₩11,900.40
10 - 95	₩2,259.76	₩11,298.80
100 - 245	₩2,124.40	₩10,622.00
250 - 495	₩1,974.00	₩9,870.00
500 +	₩1,819.84	₩9,099.20

*price indicative

RS Stock No.:: 258-3986
Mfr. Part No.:: IRFR6215TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-13A
	Maximum Drain Source Voltage Vds	-150V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	580mΩ
	Forward Voltage Vf	-1.6V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	44nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -13A
	Maximum Drain Source Voltage Vds -150V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 580mΩ
	Forward Voltage Vf -1.6V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 44nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFR6215TRLPBF

The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF

Related links