제조사부품번호

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF

RS 제품 번호:: 215-2601
제조사 부품 번호:: IRFR5410TRLPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩40,194.40

재고있음

40 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 740	₩2,009.72	₩40,194.40
760 - 1480	₩1,958.96	₩39,198.00
1500 +	₩1,928.88	₩38,596.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-2601
제조사 부품 번호:: IRFR5410TRLPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	205mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.6V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	66W
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	304-39-424

	모두 선택
	브랜드 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 205mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.6V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 66W
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 304-39-424

Datasheet - IRFR5410TRLPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF

관련된 링크들