Infineon HEXFET Type N-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRPBF
- RS Stock No.:
- 257-9414
- Mfr. Part No.:
- IRFR6215TRPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
₩12,032.00
재고있음
- 추가로 2026년 2월 09일 부터 1,530 개 단위 배송
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | ₩2,406.40 | ₩12,032.00 |
| 50 - 95 | ₩2,286.08 | ₩11,430.40 |
| 100 - 245 | ₩2,150.72 | ₩10,753.60 |
| 250 - 995 | ₩1,996.56 | ₩9,982.80 |
| 1000 + | ₩1,838.64 | ₩9,193.20 |
*price indicative
- RS Stock No.:
- 257-9414
- Mfr. Part No.:
- IRFR6215TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFR series is the -150V single p channel IR mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, -13 A, -150 V TO-252
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