Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252
- RS 제품 번호:
- 258-3983
- 제조사 부품 번호:
- IRFR2405TRLPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩2,374,440.00
일시적 품절
- 2026년 3월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩791.48 | ₩2,373,876.00 |
| 6000 - 6000 | ₩774.56 | ₩2,325,936.00 |
| 9000 + | ₩759.52 | ₩2,279,688.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-3983
- 제조사 부품 번호:
- IRFR2405TRLPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon R MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Increased ruggedness
Wide availability from distribution partners
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252 IRFR2405TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252
- Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252 IRFR4615TRLPBF
- Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V TO-252