Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252 IRFR2405TRPBF
- RS Stock No.:
- 222-4751
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
₩21,121.80
일시적 품절
- 2026년 2월 16일 부터 90 개 단위 배송
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | ₩1,408.12 | ₩21,112.40 |
| 30 - 75 | ₩1,381.80 | ₩20,736.40 |
| 90 - 225 | ₩1,357.36 | ₩20,360.40 |
| 240 - 465 | ₩1,332.92 | ₩20,003.20 |
| 480 + | ₩1,310.36 | ₩19,646.00 |
*price indicative
- RS Stock No.:
- 222-4751
- Mfr. Part No.:
- IRFR2405TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160kΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160kΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Related links
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