Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 222-4750
- 제조사 부품 번호:
- IRFR2405TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2000 units)*
₩1,549,120.00
일시적 품절
- 2026년 3월 16일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 - 8000 | ₩774.56 | ₩1,550,248.00 |
| 10000 + | ₩759.52 | ₩1,519,416.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4750
- 제조사 부품 번호:
- IRFR2405TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160kΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160kΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
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